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IRFR3411PBF irfu3411pbf hexfet ? power mosfet parameter typ. max. units r jc junction-to-case ??? 1.2 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance www.kersemi.com 1 v dss = 100v r ds(on) = 44m ? i d = 32a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead, i-pak, version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 32 i d @ t c = 100c continuous drain current, v gs @ 10v 23 a i dm pulsed drain current 110 p d @t c = 25c power dissipation 130 w linear derating factor 0.83 w/c v gs gate-to-source voltage 20 v i ar avalanche current 16 a e ar repetitive avalanche energy 13 mj dv/dt peak diode recovery dv/dt 7.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c pd - 95371a d-pak irfr3411 i-pak irfu3411

2 www.kersemi.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 16a, v gs = 0v t rr reverse recovery time ??? 115 170 ns t j = 25c, i f = 16a q rr reverse recovery charge ??? 505 760 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 33 110 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l =1.5mh r g = 25 ? , i as = 16a. (see figure 12) i sd 16 a di/d
340a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint dering techniques refer to application note #an-994. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 36 44 m ? v gs = 10v, i d = 16a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 21 ??? ??? s v ds = 50v, i d = 16a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? 48 71 i d = 16a q gs gate-to-source charge ??? 9.0 14 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 14 21 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 11 ??? v dd = 50v t r rise time ??? 35 ??? i d = 16a t d(off) turn-off delay time ??? 39 ??? r g = 5.1 ? t f fall time ??? 35 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1960 ??? v gs = 0v c oss output capacitance ??? 250 ??? v ds = 25v c rss reverse transfer capacitance ??? 40 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 700 185 mj i as = 16a, l = 1.5mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns i dss drain-to-source leakage current

www.kersemi.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 18 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 33a 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j

4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 16a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c t j = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.kersemi.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f
1 0.1 % + -

25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.kersemi.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 6.5a 11.3a 16a

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ?

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12 in the assembly line "a" as s embled on ww 16, 1999 example: with assembly this is an irfr120 lot code 1234 year 9 = 199 9 dat e code we e k 16 part number logo internat ional rectifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = designates lead-free product (opt ional) note: "p" in as s embly line pos ition i ndi cates " l ead- f r ee" 12 34 week 16 a = assembly site code part number irfu120 line a logo lot code assembly int ernational rectifier

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assembly example: wi t h as s e mb l y this is an irfu120 year 9 = 199 9 dat e code line a we e k 19 in the assembly line "a" as s emb led on ww 19, 1999 lot code 5678 part number 56 irf u120 international logo rect ifier lot code 919a 78 note: "p" in as s embly line pos i ti on i ndi cates "l ead- f r ee" 56 78 assembly lot code rectifier logo international ir f u120 part number we e k 19 dat e code year 9 = 1999 a = assembly site code p = de s i gnat e s l e ad-f r e e product (opt ional)

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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